Edward A. Preble

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Advanced PENDEOEPITAXY (TM) of GaN and AlxGa1-xN thin films on SiC(0001) and Si(111) substrates via metalorganic chemical vapor deposition

DEPENDENCE OF THERMAL CONDUCTIVITIES OF THE ALN FILM IN THE LED ARCHITECTURE ON SURFACE ROUGHNESS AND LATTICE MISMATCH

Cathodoluminescence evaluation of subsurface damage in GaN substrate after polishing

Helical-type surface defects in InGaN thin films epitaxially grown on GaN templates at reduced temperatures

Effect of Substrate Offcut on AlGaN/GaN HFET structures on Bulk GaN Substrates

Investigation of thickness effects on AlN coated metal tips by in situ I-V measurement

Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth

Highly Polarized Green Light Emitting Diode in m-Axis GaInN/GaN

Characterization and comparison of 4H-SiC(11(2)over-bar0) and 4H-SiC(0001) 8 degrees off-axis substrates and homoepitaxial films

Helical-type surface defects in GaN and InGaN thin films epitaxially grown on GaN templates at reduced temperatures

Growth of homoepitaxial films on 4H-SiC(1120) and 8 degrees off-axis 4H-SiC(0001) substrates and their characterization

Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates

Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures

Strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeoepitaxy

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Accurate dependence of gallium nitride thermal conductivity on dislocation density

Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates

Surface instability and associated roughness during conventional and pendeo-epitaxial growth of GaN(0001) films via MOVPE

Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization

III-nitride heterostructure field-effect transistors grown on semi-insulating GaN substrate without regrowth interface charge